M66252FP |
RFQ for M66252FP Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| M66252FP | - | SOP24 | - |
The M66252P/FP is a high-speed line memory with a FIFO(First In First Out) structure of 1152-word × 8-bit configuration which uses high-performance silicon gate CMOS process technology.
It has separate clock, enable and reset signals for write and read and is most suitable as a buffer memory between
devices with different data processing throughput.
Typical Application |
Features |
| Digital photocopiers, high-speed facsimiles, laser beam printers. | • Memory construction ........................................................ ....................... 1152words x 8bits (dynamic memory)• High-speed cycle ............................................ 50ns (min.)• High-speed access ........................................ 40ns (max.)• Output hold ....................................................... 5ns (min.)• Fully independent, asynchronous write and read operations• Variable-length delay bit• Output .................................................................... 3-state |
|
Symbol |
Parameter |
Conditions |
Rating |
Unit |
| Vcc | Supply voltage |
Reference pin: GND |
-0.5to+7.0 |
V |
| VI | Input voltage |
0.5 toVcc+0.5 |
V | |
| Vo | Output voltage |
0.5 toVcc+0.5 |
V | |
| Pd | Power dissipation | Ta = 25°C |
550(Note 1) |
mW |
| Tstg | Storage temperature |
-65 to +150 |
°C |
Note 1: Ta 62°C are derated at 8.8mW/°C (24P4Y)
Ta 51°C are derated at 7.5mW/°C (24P2W)
